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logic controlled, high-side power switch ADP190 rev. 0 information furnished by analog devices is believed to be accurate and reliable. however, no responsibility is assumed by analog devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. specifications subject to change without notice. no license is granted by implication or otherwise under any patent or patent rights of analog devices. trademarks and registered trademarks are the property of their respective owners. one technology way, p.o. box 9106, norwood, ma 02062-9106, u.s.a. tel: 781.329.4700 www.analog.com fax: 781.461.3113 ?2009 analog devices, inc. all rights reserved. features low rds on of 105 m @ 1.8 v low input voltage range: 1.2 v to 3.6 v 500 ma continuous operating current built-in level shift for control logic that can be operated by 1.2 v logic low 2 a (maximum) ground current ultralow shutdown current: <1 a ultrasmall 0.8 mm 0.8 mm, 4-ball, 0.4 mm pitch wlcsp applications mobile phones digital cameras and audio devices portable and battery-powered equipment typical applications circuit gnd en ? + level shifter load vin vout ADP190 07874-001 figure 1. general description the ADP190 is a high-side load switch designed for operation from 1.2 v to 3.6 v. this load switch provides power domain isolation for extended power battery life. the device contains a low on-resistance p-channel mosfet that supports more than 500 ma of continuous current and minimizes power loss. the low 2 a (maximum) of ground current and ultralow shutdown current make the ADP190 ideal for battery-operated portable equipment. the built-in level shifter for enable logic makes the ADP190 compatible with modern processors and gpio controllers. beyond operating performance, the ADP190 occupies minimal printed circuit board (pcb) space with an area less than 0.64 mm 2 and a height of 0.60 mm. it is available in an ultrasmall 0.8 mm 0.8 mm, 4-ball, 0.4 mm pitch wlcsp.
ADP190 rev. 0 | page 2 of 16 table of contents features .............................................................................................. 1 applications ....................................................................................... 1 typical applications circuit ............................................................ 1 general description ......................................................................... 1 revision history ............................................................................... 2 specifications ..................................................................................... 3 absolute maximum ratings ............................................................ 4 thermal data ................................................................................ 4 thermal resistance ...................................................................... 4 esd caution .................................................................................. 4 pin configuration and function descriptions ............................. 5 typical performance characteristics ..............................................6 theory of operation .........................................................................8 applications information .................................................................9 ground current .............................................................................9 enable feature ...............................................................................9 timing ............................................................................................9 thermal considerations ............................................................ 10 pcb layout considerations ...................................................... 12 outline dimensions ....................................................................... 13 ordering guide .......................................................................... 13 revision history 1/09revision 0: initial version
ADP190 rev. 0 | page 3 of 16 specifications v en = v in , i load = 200 ma, t a = 25c, unless otherwise noted. table 1. parameter symbol test conditions min typ max unit input voltage range v in t j = ?40c to +125c 1.2 3.6 v en input en input threshold v en_th 1.1 v v in 1.3 v, t j = ?40c to +85c 0.3 1.0 v 1.3 v < v in < 1.8 v, t j = ?40c to +85c 0.4 1.2 v 1.8 v v in 3.6 v, t j = ?40c to +85c 0.45 1.2 v logic high voltage v ih 1.1 v v in 3.6 v 1.2 v logic low voltage v il 1.1 v v in 3.6 v 0.3 v en input pull-down resistance r en v in = 1.8 v 4 m current ground current 1 i gnd v in = 3.6 v, vout open, t j = ?40c to +85c 2 a shutdown current i off v in = 1.8 v, en = gnd 0.1 a v in = 1.8 v, en = gnd, t j = ?40c to +85c 2 a vin to vout resistance rds on v in = 1.8 v ,v in = 3.6 v, i load = 200 ma, en = 1.5 v 80 m v in = 2.5 v, i load = 200 ma, en = 1.5 v 90 m v in = 1.8 v, i load = 200 ma, en = 1.5 v 105 130 m v in = 1.5 v, i load = 200 ma, en = 1.5 v 125 m v in = 1.2 v, i load = 200 ma, en = 1 v 160 m vout time turn-on delay time t on_dly v in = 1.8 v, i load = 200 ma, en = 1.5 v, c load = 1 f 5 s turn-on delay time t on_dly v in = 3.6 v, i load = 200 ma, en = 1.5 v, c load = 1 f 1.5 s 1 ground current includes en pull-down current. timing diagram v en v out turn-on rise 90% 10% turn-off delay turn-off fall turn-on delay 07874-003 figure 2. timing diagram
ADP190 rev. 0 | page 4 of 16 absolute maximum ratings table 2. parameter rating vin to gnd pins ?0.3 v to +3.6 v vout to gnd pins ?0.3 v to v in en to gnd pins ?0.3 v to +3.6 v continuous drain current t a = 25c 1 a t a = 85c 500 ma continuous diode current ?50 ma storage temperature range ?65c to +150c operating junction temperature range ?40c to +125c soldering conditions jedec j-std-020 stresses above those listed under absolute maximum ratings may cause permanent damage to the device. this is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. thermal data absolute maximum ratings apply individually only, not in combination. the ADP190 can be damaged when the junction temperature limits are exceeded. monitoring ambient temperature does not guarantee that t j is within the specified temperature limits. in applications with high power dissipation and poor pcb thermal resistance, the maximum ambient temperature may need to be derated. in applications with moderate power dissipation and low pcb thermal resistance, the maximum ambient temperature can exceed the maximum limit as long as the junction temperature is within specification limits. the junction temperature (t j ) of the device is dependent on the ambient temperature (t a ), the power dissipation of the device (p d ), and the junction-to-ambient thermal resistance of the package ( ja ). maximum junction temperature (t j ) is calculated from the ambient temperature (t a ) and power dissipation (p d ) using the formula t j = t a + ( p d ja ) junction-to-ambient thermal resistance ( ja ) of the package is based on modeling and calculation using a 4-layer board. the junction-to-ambient thermal resistance is highly dependent on the application and board layout. in applications where high maximum power dissipation exists, close attention to thermal board design is required. the value of ja may vary, depending on pcb material, layout, and environmental conditions. the speci- fied values of ja are based on a 4-layer, 4 inch 3 inch pcb. refer to jesd51-7 and jesd51-9 for detailed information regarding board construction. for additional information, see the an-617 application note, microcsp tm wafe r le vel chip scale package . jb is the junction-to-board thermal characterization parameter with units of c/w. jb of the package is based on modeling and calculation using a 4-layer board. the jesd51-12 document, guidelines for reporting and using electronic package thermal information , states that thermal characterization parameters are not the same as thermal resistances. jb measures the component power flowing through multiple thermal paths rather than through a single path, as in thermal resistance ( jb ). therefore, jb thermal paths include convection from the top of the package as well as radiation from the package, factors that make jb more useful in real-world applications. maximum junction temperature (t j ) is calculated from the board temperature (t b ) and the power dissipation (p d ) using the formula t j = t b + ( p d jb ) refer to jesd51-8, jesd51-9, and jesd51-12 for more detailed information about jb . thermal resistance ja and jb are specified for the worst-case conditions, that is, a device soldered in a circuit board for surface-mount packages. table 3. thermal resistance package type ja jb unit 4-ball, 0.4 mm pitch wlcsp 260 58.4 c/w esd caution
ADP190 rev. 0 | page 5 of 16 pin configuration and fu nction descriptions vin vout 12 en a b gnd top view (not to scale) 07874-002 figure 3. pin configuration table 4. pin function descriptions pin no. mnemonic description a1 vin input voltage. b1 en enable input. drive en high to turn on the switch; drive en low to turn off the switch. a2 vout output voltage. b2 gnd ground.
ADP190 rev. 0 | page 6 of 16 typical performance characteristics v in = 1.8 v, en = v in > v ih , i load = 100 ma, t a = 25c, unless otherwise noted. 200 180 160 140 120 100 80 60 125 85 25 ?5 ?40 junction temperature, t j (c) rds on (m ? ) v in = 1.2v v in = 1.8v 07874-004 v in = 3.6v figure 4. rds on vs. temperature (includes ~15 m trace resistance) 200 180 160 140 120 100 80 1.2 2.0 1.6 2.4 2.8 3.2 3.6 v in (v) rds on (m ? ) i load = 10ma i load = 100ma i load = 250ma i load = 350ma i load = 500ma 07874-005 figure 5. rds on vs. input voltage, v in (includes ~15 m trace resistance) 100 80 60 40 20 0 ?20 0 100 50 150 200 250 300 350 load (ma) difference (mv) v in = 1.2v v in = 2.5v v in = 3.6v v in = 1.8v 07874-006 figure 6. voltage drop vs. load current (includes ~15 m trace resistance) ch1 500mv ch2 2v m1.00s a ch1 990mv t 3.0s 1 2 t v en v out v out = 3.6v i load = 200ma c load = 1f v en = 1.5v 07874-007 figure 7. turn-on delay vs. input voltage = 3.6 v 2 ch1 500mv ch2 1v m4s a ch1 990mv t 12s 1 t v out = 1.8v i load = 200ma c load = 1f v en = 1.5v 07874-008 v en v out figure 8. turn-on delay vs. input voltage = 1.8 v 1.3 1.2 1.1 1.0 0.9 0.8 0.7 125 85 25 ?5 ?40 junction temperature, t j (c) ground current (a) i load = 10ma i load = 100ma i load = 250ma i load = 350ma i load = 500ma 07874-009 figure 9. ground current vs. temperature
ADP190 rev. 0 | page 7 of 16 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 3.2 3.6 1.2 1.7 2.2 2.7 v in (v) ground current (a) i load = 10ma i load = 100ma i load = 250ma i load = 350ma i load = 500ma 07874-010 figure 10. ground current vs. input voltage, v in 0.7 0.6 0.5 0.4 0.3 0.2 0 0.1 125 100 75 50 25 0 ?25 ?50 junction temperature, t j (c) shutdown current (a) v in = 1.2v v in = 1.8v v in = 2.5v v in = 3.6v 07874-011 figure 11. shutdown current vs. temperature
ADP190 rev. 0 | page 8 of 16 theory of operation the ADP190 is a high-side pmos load switch. it is designed for supply operation from 1.2 v to 3.6 v. the pmos load switch is designed for low on resistance, 105 m at v in = 1.8 v, and supports 500 ma of continuous current. it is a low ground current device with a nominal 4 m pull-down resistor on its enable pin. the package is a space-saving 0.8 mm 0.8 mm, 4-ball wlcsp. gnd en ? + level shifter load vin vout ADP190 07874-030 figure 12. functional block diagram
ADP190 rev. 0 | page 9 of 16 applications information ground current the major source for ground current in the ADP190 is the 4 m pull-down on the enable (en) pin. figure 13 shows typical ground current when v en = v in and v in varies from 1.2 v to 3.6 v. 2.0 1.8 1.6 1.4 1.2 1.0 0.6 0.8 350 300 250 200 150 100 50 0 load (ma) ground current (a) 07874-013 v in = 1.2v v in = 1.8v v in = 2.5v v in = 3.6v figure 13. ground current vs. load current as shown in figure 14 , an increase in ground current can occur when v en v in . this is caused by the cmos logic nature of the level shift circuitry as it translates an en signal 1.2 v to a logic high. this increase is a function of the v in ? v en delta. 14 12 10 8 6 4 2 0 3.5 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 2.7 3.33.12.9 v en (v) i gnd (a) 07874-014 v out = 1.8v v out = 3.6v figure 14. typical ground current when v en v in enable feature the ADP190 uses the en pin to enable and disable the vout pin under normal operating conditions. as shown in figure 15 , when a rising voltage on en crosses the active threshold, vout turns on. when a falling voltage on en crosses the inactive threshold, vout turns off. 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 1.2 0 0.4 0.5 0.6 0.7 0.1 0.2 0.3 0.8 0.9 1.0 1.1 v en (v) v out (v) 07874-015 figure 15. typical en operation as shown in figure 15 , the en pin has built-in hysteresis. this prevents on/off oscillations that can occur due to noise on the en pin as it passes through the threshold points. the en pin active/inactive thresholds derive from the vin voltage; therefore, these thresholds vary with changing input voltage. figure 16 shows typical en active/inactive thresholds when the input voltage varies from 1.2 v to 3.6 v. 1.15 1.05 0.95 0.85 0.75 0.65 0.55 0.45 0.35 3.60 1.20 1.35 1.50 1.65 1.80 1.95 2.10 2.25 2.40 2.55 2.70 2.85 3.00 3.15 3.30 3.45 v in (v) typical en thresholds (v) en active en inactive 07874-016 figure 16. typical en pin thresholds vs. input voltage, v in timing turn-on delay is defined as the delta between the time that en reaches >1.2 v until vout rises to ~10% of its final value. the ADP190 includes circuitry to set the typical 1.5 s turn-on delay at 3.6 v v in to limit the v in inrush current. as shown in figure 17 , the turn-on delay is dependent on the input voltage.
ADP190 rev. 0 | page 10 of 16 2 ch1 1v ch2 1v m4s a ch1 2.34v t 15.96s 1 t i load = 100ma c load = 1f v en = 3.6v v out = 1.2v v out = 1.8v v out = 2.5v v en 07874-017 figure 17. typical turn-on delay time with varying input voltage the rise time is defined as the delta between the time from 10% to 90% of vout reaching its final value. it is dependent on the rc time constant where c = load capacitance (c load ) and r = rds on ||r load . because rds on is usually smaller than r load , an adequate approximation for rc is rds on c load . the ADP190 does not need any input or load capacitor, but capacitors can be used to suppress the noise issues on the board. if significant load capacitance is connected, inrush current is a concern. 2 3 ch1 2v ch3 2.00ma ? ch2 2v m10s a ch1 2.32v t 40.16s 1 t v out = 1.8v i load = 200ma c load = 1f v en = 3.6v v en v out i in 07874-029 figure 18. typical rise time and inrush current with c load = 1 f 2 3 ch1 2v ch3 2.00ma ? ch2 2v m10s a ch1 1.00v t 39.8s 1 v out = 1.8v i load = 200ma c load = 4.7f v en = 3.6v v en v out i in t 07874-019 figure 19. typical rise time and inrush current with c load = 4.7 f the turn-off time is defined as the delta between the time from 90% to 10% of vout reaching its final value. it is also dependent on the rc time constant. 2 ch1 1v ch2 500mv m10s a ch1 1v t 30.36s 1 t v out = 1.8v v en = 3.6v i load = 200ma, c load = 1f i load = 100ma, c load = 1f i load = 100ma, c load = 4.7f v en 07874-020 figure 20. typical turn-off time thermal considerations in most applications, the ADP190 does not dissipate much heat due to its low on-channel resistance. however, in applications with high ambient temperature and load current, the heat dissipated in the package can be large enough to cause the junction temperature of the die to exceed the maximum junction temperature of 125c. the junction temperature of the die is the sum of the ambient temperature of the environment and the temperature rise of the package due to the power dissipation, as shown in equation 1. to guarantee reliable operation, the junction temperature of the ADP190 must not exceed 125c. to ensure that the junction temperature stays below this maximum value, the user needs to be aware of the parameters that contribute to junction temperature changes. these parameters include ambient temperature, power dissipation in the power device, and thermal resistances between the junction and ambient air ( ja ). the ja value is dependent on the package assembly compounds that are used and the amount of copper used to solder the package gnd pin to the pcb. table 5 shows typical ja values of the 4-ball wlcsp for various pcb copper sizes. tabl e 6 shows the typical jb value of the 4-ball wlcsp. table 5. typical ja values for wlcsp copper size (mm 2 ) ja (c/w) 0 1 260 50 159 100 157 300 153 500 151 1 device soldered to minimum size pin traces. table 6. typical jb values package jb unit 4-ball wlcsp 58.4 c/w
ADP190 rev. 0 | page 11 of 16 the junction temperature of the ADP190 can be calculated from the following equation: t j = t a + ( p d ja ) (1) where: t a is the ambient temperature. p d is the power dissipation in the die, given by p d = [( v in ? v out ) i load ] + ( v in i gnd ) (2) where: i load is the load current. i gnd is the ground current. v in and v out are the input and output voltages, respectively. power dissipation due to ground current is quite small and can be ignored. therefore, the junction temperature equation simplifies to the following: t j = t a + {[( v in ? v out ) i load ] ja } (3) as shown in equation 3, for a given ambient temperature, input- to-output voltage differential, and continuous load current, there exists a minimum copper size requirement for the pcb to ensure that the junction temperature does not rise above 125c. figure 21 to figure 26 show junction temperature calculations for different ambient temperatures, load currents, v in to v out differentials, and areas of pcb copper. 140 120 100 80 60 40 20 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v in ? v out (v) junction temperature, t j (c) load current = 1ma load current = 10ma load current = 25ma load current = 50ma load current = 75ma max junction temperature load current = 100ma load current = 150ma 07874-021 figure 21. wlcsp, 500 mm 2 of pcb copper, t a = 25c 140 120 100 80 60 40 20 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v in ? v out (v) junction temperature, t j (c) load current = 1ma load current = 10ma load current = 25ma load current = 50ma load current = 75ma max junction temperature load current = 100ma load current = 150ma 07874-022 figure 22. wlcsp, 100 mm 2 of pcb copper, t a = 25c 140 120 100 80 60 40 20 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v in ? v out (v) junction temperature, t j (c) max junction temperature load current = 1ma load current = 10ma load current = 25ma load current = 50ma load current = 75ma load current = 100ma load current = 150ma 07874-023 figure 23. wlcsp, 0 mm 2 of pcb copper, t a = 25c 140 120 100 80 60 40 20 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v in ? v out (v) junction temperature, t j (c) load current = 1ma load current = 10ma load current = 25ma load current = 50ma load current = 75ma load current = 100ma load current = 150ma max junction temperature 07874-024 figure 24. wlcsp, 500 mm 2 of pcb copper, t a = 50c
ADP190 rev. 0 | page 12 of 16 140 120 100 80 60 40 20 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v in ? v out (v) junction temperature, t j (c) max junction temperature load current = 1ma load current = 10ma load current = 25ma load current = 50ma load current = 75ma load current = 100ma load current = 150ma 07874-027 140 120 100 80 60 40 20 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v in ? v out (v) junction temperature, t j (c) load current = 1ma load current = 10ma load current = 25ma load current = 50ma load current = 75ma load current = 100ma load current = 150ma max junction temperature 07874-025 figure 25. wlcsp, 100 mm 2 of pcb copper, t a = 50c 140 120 100 80 60 40 20 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v in ? v out (v) junction temperature, t j (c) load current = 1ma load current = 10ma load current = 25ma load current = 50ma load current = 75ma load current = 100ma load current = 150ma max junction temperature 07874-026 figure 26. wlcsp, 0 mm 2 of pcb copper, t a = 50c figure 27. wlcsp, t b = 85c pcb layout considerations improve heat dissipation from the package by increasing the amount of copper attached to the pins of the ADP190. however, as listed in table 5 , a point of diminishing returns is eventually reached, beyond which an increase in the copper size does not yield significant heat dissipation benefits. it is critical to keep the input and output traces as wide and as short as possible to minimize the circuit board trace resistance. in cases where the board temperature is known, use the thermal characterization parameter, jb , to estimate the junction temper- ature rise. maximum junction temperature (t j ) is calculated from the board temperature (t b ) and power dissipation (p d ) using the formula t j = t b + ( p d jb ) (4) 07874-028 figure 28. wlcsp pcb layout
ADP190 rev. 0 | page 13 of 16 outline dimensions 0 11409-a 0.050 nom coplanarity 0.800 0.760 sq 0.720 0.230 0.200 0.170 0.280 0.260 0.240 0.660 0.600 0.540 0.430 0.400 0.370 bottom view (ball side up) top view (ball side down) a 12 b seating plane 0.40 ball pitch ball a1 identifie r figure 29. 4-ball wafer level chip scale package [wlcsp] (cb-4-3) dimensions shown in millimeters ordering guide model temperature range package desc ription package option branding ADP190acbz-r7 1 ?40c to +85c 4-ball wafer level chip scale package [wlcsp] cb-4-3 l9c ADP190cb-evalz 1 evaluation board 1 z = rohs compliant part.
ADP190 rev. 0 | page 14 of 16 notes
ADP190 rev. 0 | page 15 of 16 notes
ADP190 rev. 0 | page 16 of 16 notes ?2009 analog devices, inc. all rights reserved. trademarks and registered trademarks are the prop erty of their respective owners. d07874-0-1/09(0)

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